ECH8655R
0 μ
1m
10
ms
0m
era
tio
To
al
Di
ss
1u
a i t
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=60A
ID=9A
DC
Operation in this
area is limited by RDS(on).
op
10
n
s
PW ≤ 10 μ s
10
s
s
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
PD -- Ta
When mounted on ceramic substrate
(900mm 2 ? 0.8mm)
t
ip
ni t on
3 When mounted on ceramic substrate
(900mm 2 ? 0.8mm) 1unit
0.1
7 Ta=25 ° C
5 Single pulse
2
0.01
0.4
0.2
0
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
IT13391
Ambient Temperature, Ta -- ° C
IT13154
No. A1011-4/7
相关PDF资料
ECH8656-TL-H MOSFET N-CH 20V 7.5A ECH8
ECH8657-TL-H MOSFET N-CH DUAL 35V 4.5A ECH8
ECH8659-TL-H MOSFET N-CH DUAL 30V 7A ECH8
ECH8660-TL-H MOSFET N/P-CH 30V 4.5A ECH8
ECH8661-TL-H MOSFET N/P-CH 30V 7A ECH8
ECH8662-TL-H MOSFET N-CH DUAL 40V 6.5A ECH8
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
ECH8668-TL-H MOSFET N/P-CH 20V 7.5A ECH8
相关代理商/技术参数
ECH8656 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8656_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8656-TL-H 功能描述:MOSFET NCH+NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8657 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8657_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8657-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8659 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8659_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications